1 Why is it called ProMOST ?
 2 Better designs in less time - yippee!
  2.1 What can be set independently in a transistor anyway...
  2.2 An N = 3^#transistors-dimensional optimization problem
  2.3 An example
  2.4 Reducing the complexity of the optimization problem
  2.5 Getting a good starting point is quite important
  2.6 Efficient dimensioning flowchart
  2.7 Ow, I cannot meet all target specs...
 3 Simple models and element equations
  3.1 Notations
  3.2 Simplified element equations: drain current
  3.3 Simplified element equations: transconductance
  3.4 Simplified element equations: drain conductance
  3.5 Simplified element equations: unity gain frequency
  3.6 Simplified element equations: spread
  3.7 Simplified element equations: thermal noise
  3.8 Simplified element equations: flicker noise
  3.9 Nonideality: Mobility reduction & velocity saturation
  3.10 What’s the use of these equations anyway?
 4 Transistor models
  4.1 Standard MOS models
  4.2 Extended/compound MOS models
  4.3 The problem of not having equivalent behavior
  4.4 The solution: having an equivalent model
 5 Transcapacitances and transconductances
  5.1 Symmetry leading to 16=9...
  5.2 Symmetry leading to negative g_xy-s and negative c_xy-s
  5.3 Hey, there’s a c_gs and a c_sg with a different value...
 6 Small signal models... and small signal models
  6.1 Introduction
  6.2 Example circuit to demonstrate SSEC impact
  6.3 Derivation of a_v and z_in - part I (for SSEC-conv, incorrect results)
  6.4 Derivation of a_v and z_in (for SSEC-Y, correct results)
  6.5 Comparison of a_v and z_in results
  6.6 What about compound models’ small signal parameters?
  6.7 A solution
 7 Be in charge